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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 800 6 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 7 14 3.5 80 150 -55~150 UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5003 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IEB=300mA; IB=0 IC=5A;IB=1.2A IC=5A;IB=1.2A VCB=1200V; IE=0 VCB=1500V; IE=0 VCE=800V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V 8 4 MIN 6 5 1.5 100 1 1 100 |I |I TYP. MAX UNIT V V V A mA mA A SYMBOL V(BR)EBO VCEsat VBEsat ICBO1 ICBO2 ICEO IEBO hFE-1 hFE-2 VFEC fT COB Switching times tstg tf NDU ICO E SEM ANG INCH Forward voltage IEC=7A Transition frequency IE=-0.5A ; VCE=12V VCB=10V;f=1MHz Output capacitance Storage time Fall time IC=4A;IB1=0.8A; IB2=-1.6A;RL=50 VCC=200V TOR 9 2.0 4 100 V MHz pF 4.0 0.2 |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5003 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5003 TOR NDU ICO E SEM ANG INCH 4 |
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